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| SHINDENGEN Schottky Rectifiers (SBD) Dual S20SC4M 40V 20A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Small AE jc *oe High current capacity APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 V Pulse width RRSM 45 V Average Rectified Forward Current wave, R-load, Rating for each diode Io/2, T IO 50Hz sine 20 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak A 170 value, Tj Repetitive Peak Surge Reverse Power 10Es, Rating of per diode, Tj=25*Z P Pulse width RRSM 660 W Mounting Torque F TOR(Recommended torque* 0.5Nm) 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Forward Voltage V IF F2 =10A, Pulse measurement, Rating of per diode Max.0.59 V Reverse Current I V=V M, R R R Pulse measurement, Rating of Max.5 mA per diode Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.340pF R =10V, Thermal Resistance j AEjcunction to case Max.1.2 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S20SC4M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S20SC4M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] S20SC4M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S20SC4M 30 Reverse Power Dissipation Reverse Power Dissipation PR [W] 25 DC D=0.05 0.1 0.2 15 0.3 20 0.5 10 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S20SC4M 25 Forward Power Dissipation DC Forward Power Dissipation PF [W] 20 0.5 SIN 15 0.2 10 0.1 0.05 0.3 D=0.8 5 0 0 5 10 15 20 25 30 35 40 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S20SC4M 40 Derating Curve Average Rectified Forward Current IO [A] 35 DC 30 D=0.8 25 20 0.5 SIN 0.3 15 0.2 10 5 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V IO 0 0 VR tp D=tp /T T S20SC4M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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